Question
The source and drain contacts for a GaAs field-effect transistor are each made on a 0.2μm thick N-type layer doped at ND = 4.0×10^17. The planar Ohmic contacts have a specifice contact resistance of ρc =8.0×10^−7 Ω⋅cm^2. (a) If the electron mobility in this GaAs layer is μn =4200 cm 2 /Vs, what is the sheet resistance Rs of the doped layer? (b) What is the transfer length(LT) of the contact and surface layer structure? (c) What is the apparent contact resistance for a device contact with a width of 200μm ?Subscribe our channel for more SOLUTION
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